Search results for "Reverse bia"
showing 4 items of 4 documents
Bipolar membranes under forward and reverse bias conditions. Theory vs. experiment
1994
Abstract Bipolar membranes are layered structures composed of one cation-and one anion-exchange membrane joined together in series. The current—voltage curves of two recently developed bipolar membranes have been analysed theoretically and experimentally under both forward and reverse bias conditions. The experimental trends observed are high conductivity under forward bias conditions and high impedance first, and then electric field enhanced (EFE) water dissociation for high enough applied voltages, under reverse bias conditions. The forward bias measurements can contribute to a better knowledge of some of the transport parameters entering also in the reverse biased membrane. Comparison of…
Failure Rate Measurement on Silicon Diodes Reverse Polarized at High Temperature
2017
This paper calculates the failure rate on reversed polarized silicon diodes with the aim to justify, experimentally, the rules of the European Space Agency (ESA) which are referred to the component life’s extension, the reliability increase and the end of life performance enhancement, by using oversized devices (derating rules). In order to verify the derating rules, 80 silicon diodes are used, which are reverse polarized in a high temperature environment. The diodes are divided in 4 groups of 20 diodes, applying a different voltage to each group, in order to relate the failure rate to the applied derating rule. The experiment described in this paper is developed using a temperature acceler…
Cryogenic operation of silicon detectors
2000
This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a #uence of 3.5]1014 p/cm2 and of a p}n junction diode detector irradiated to a similar #uence. At temperatures below 130 K a recovery of charge collection e$ciency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as
Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors
2012
We report a systematic study of time-resolved and power-dependent photoresponse in high-efficiency germanium quantum dot photodetectors (Ge-QD PDs), with internal quantum efficiencies greater than 100 over a broad wavelength, reverse bias, and incident power range. Turn-on and turn-off response times (τ on and τ off) are shown to depend on series resistance, bias, optical power, and thickness (W QD) of the Ge-QD layer, with measured τ off values down to ∼40 ns. Two different photoconduction regimes are observed at low and high reverse bias, with a transition around -3 V. A transient current overshoot phenomenon is also observed, which depends on bias and illumination power. © 2012 American …